Author Affiliations
Abstract
1 Institute for Photonics-Electronics Convergence System Technology (PECST), Japan
2 Photonics Electronics Technology Research Association (PETRA), West 7 SCR, 16-1 Onogawa, Tsukuba, Ibaraki, Japan
3 National Institute of Advanced Industrial Science and Technology, West 7 SCR, 16-1 Onogawa, Tsukuba, Ibaraki, Japan
4 Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro, Tokyo, Japan
One of the most serious challenges facing exponential performance growth in the information industry is the bandwidth bottleneck in interchip interconnects. We propose a photonics–electronics convergence system in response to this issue. To demonstrate the feasibility of the system, we fabricated a silicon optical interposer integrated with arrayed laser diodes, spot-size converters, optical splitters, optical modulators, photodetectors, and optical waveguides on a single silicon substrate. Using this system, 20 Gbps error-free data links and a 30 Tbps/cm2 bandwidth density were achieved. This bandwidth density is sufficient to meet the interchip interconnect requirements for the late 2010s.
Integrated optics devices Optical interconnects Optoelectronics 
Photonics Research
2014, 2(3): 030000A1
Author Affiliations
Abstract
Research Center for Advanced Science and Technology, Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Meguro-ku, 153-8505 Tokyo, Japan
Recent advances in quantum dots (QDs) for classical and non-classical light sources are presented. We have established metal organic chemical vapor deposition (MOCVD) technology for InAs-based Q D lasers at 1.3 \mm and achieved ultralow threshold in Q D lasers with photonic crystal (PhC) nanocavity. In addition, single photon emitters at 1.55 \mum, GaN-based single photon sources operating at 200 K, and high- PhC nanocavity have been demonstrated.
量子点 量子点激光器 光子晶体纳米腔 MOCVD生长 250.0250 Optoelectronics 250.5590 Quantum-well, -wire and -dot devices 160.5298 Photonic crystals 
Chinese Optics Letters
2008, 6(10): 718
作者单位
摘要
1 Fujitsu Ltd., Kanagawa, Japan
2 University of Tokyo, Tokyo, Japan
光学学报
2003, 23(s1): 459

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